CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems
In: Applied Physics Letters, Jg. 122 (2023-01-09), S. 022905-22905
Online
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Zugriff:
Neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor compatible W/WOx/HfO2/Ru cell in a 3D vertical memristive structure were investigated. We show that the device exhibits nonfilamentary forming-free multilevel resistive switching with gradual resistance change. In addition, the poor retention of a low resistance state allows integration of these structures in architectures that require short-term memory characteristics such as reservoir computing systems. The ability of the device to rely on the temporal sequence of the stream was tested with the digit recognition task. Since a WOx layer was obtained by thermal oxidization and HfO2 and Ru layers were grown by atomic layer deposition methods, the device is suitable for high-density systems with high connectivity within a neural network.
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CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems
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Autor/in / Beteiligte Person: | Koroleva, Aleksandra A. ; Kuzmichev, Dmitry S. ; Kozodaev, Maxim G. ; Zabrosaev, Ivan V. ; Korostylev, Evgeny V. ; Markeev, Andrey M. |
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Zeitschrift: | Applied Physics Letters, Jg. 122 (2023-01-09), S. 022905-22905 |
Veröffentlichung: | AIP Publishing, 2023 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/5.0138218 |
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