Comment on ‘‘Size effects and charge-density-wave pinning inNb1−xTixSe3: Evidence for weak pinning by a nonisoelectronic impurity’’
In: Physical Review B, Jg. 47 (1993-03-15), S. 7614-7617
Online
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Zugriff:
DiCarlo et al. have recently published experimental data on the effects of Ti impurity doping on threshold field E T for the sliding charge-density-wave (CDW) conductor NbSe 3 at 77 K. They claim these data show that nonisoelectronic Ti impurities pin the CDW weakly, with a pinning strength 40 times greater than isoelectronic Ta atoms, and that size effects at small thicknesses support their three-dimensional-to-two-dimensional crossover model of weak pinning. Here I criticize their analysis, and offer an alternative interpretation
Titel: |
Comment on ‘‘Size effects and charge-density-wave pinning inNb1−xTixSe3: Evidence for weak pinning by a nonisoelectronic impurity’’
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Autor/in / Beteiligte Person: | Tucker, J. R. |
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Zeitschrift: | Physical Review B, Jg. 47 (1993-03-15), S. 7614-7617 |
Veröffentlichung: | American Physical Society (APS), 1993 |
Medientyp: | unknown |
ISSN: | 1095-3795 (print) ; 0163-1829 (print) |
DOI: | 10.1103/physrevb.47.7614 |
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