The Future of Ultra-Low Power SOTB CMOS Technology and Applications
In: The Frontiers Collection ISBN: 9783030183370; (2020)
Online
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Zugriff:
Ultra-low power technology has drawn much attention recently as the number of connecting (Internet-of-Things) devices rapidly increases. The silicon-on-thin-buried oxide (SOTB) technology is a CMOS device technology that uses fully depleted silicon-on-insulator (FDSOI) transistors with a thin buried oxide layer enabling enhanced back-bias controllability and that can be monolithically integrated with the conventional bulk CMOS circuits. It can significantly reduce both the operation and the standby powers by taking advantage of low-voltage operation and back-biasing, respectively. In this chapter, advantages of the SOTB technology in terms of ultra-low power, circuits design and chip implementation examples including ultra-low power micro-controllers operating with harvested power, reconfigurable logic circuits, analog circuits, are reviewed, and a future perspective is shown.
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The Future of Ultra-Low Power SOTB CMOS Technology and Applications
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Autor/in / Beteiligte Person: | Sugii, Nobuyuki ; Kamohara, Shiro ; Ikeda, Makoto |
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Quelle: | The Frontiers Collection ISBN: 9783030183370; (2020) |
Veröffentlichung: | Springer International Publishing, 2020 |
Medientyp: | unknown |
ISBN: | 978-3-030-18337-0 (print) |
DOI: | 10.1007/978-3-030-18338-7_6 |
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