MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells
In: Japanese Journal of Applied Physics, Jg. 37 (1998), S. L71
Online
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Zugriff:
MoSe2 layers formed at the interface between Cu-In-Ga-Se and Mo layers were studied by X-ray diffraction and high resolution transmission electron microscopy. Various composition Cu-In-Ga-Se films such as Se, Cu-Se, In-Ga-Se and Cu-rich Cu-In-Ga-Se were deposited on Mo coated glass substrates by physical vapor deposition. For the case of the Se/Mo interface, a MoSe2 layer of about 100 Å thickness was observed. The c-axis of the MoSe2 grains were found to be oriented normal to the surface of Mo layer. For the Cu-Se/Mo and Cu-rich Cu-In-Ga-Se/Mo structures, the thickness of the MoSe2 layers found at the interface was thin. For the case of the In-Ga-Se/Mo structure, a 0.1 µm thick interfacial MoSe2 layer was observed whose c-axis was oriented parallel to the Mo surface. The microstructure of the In-Ga-Se/Mo film was similar to that of the device quality CIGS/Mo structure deposited by the “3-stage” process. A formation mechanism for the MoSe2 layers occurring during the “3-stage” process is proposed.
Titel: |
MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells
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Autor/in / Beteiligte Person: | Kohara, Naoki ; Negami, Takayuki ; Wada, Takahiro ; Nishiwaki, Shiro |
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Zeitschrift: | Japanese Journal of Applied Physics, Jg. 37 (1998), S. L71 |
Veröffentlichung: | IOP Publishing, 1998 |
Medientyp: | unknown |
ISSN: | 1347-4065 (print) ; 0021-4922 (print) |
DOI: | 10.1143/jjap.37.l71 |
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