Effects of Ga concentration on structural and electrical properties of screen printed-CIGS absorber layers on polyethylene terephthalate
In: Materials Science in Semiconductor Processing, Jg. 15 (2012-04-01), S. 206-213
Online
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Zugriff:
Copper indium gallium diselenide (CIGS) films were deposited as an absorber layer on polyethylene terephthalate (PET) substrates by a screen printing technique using CIGS ink with a Ga content ranging from 0.3 to 0.6. The melting point of PET substrate is 254.9 °C; the average transmission in the visible (400 nm–800 nm) for PET substrates is greater than 85%. Effects of Ga content of the CIGS absorber layer on structural and electrical properties of the CIGS films were studied. The lattice parameters, a and c for all CIGS films were decreased with increasing Ga content. At room temperature, Hall mobility and charge-carrier concentration of the CIGS films varies from 97.2 to 2.69 cm2 V−1 s−1 and 9.98×1016 to 3.23×1018 cm−3, respectively.
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Effects of Ga concentration on structural and electrical properties of screen printed-CIGS absorber layers on polyethylene terephthalate
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Autor/in / Beteiligte Person: | Faraj, M. G. ; Salhin, A. ; Ibrahim, Kamarulazizi |
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Zeitschrift: | Materials Science in Semiconductor Processing, Jg. 15 (2012-04-01), S. 206-213 |
Veröffentlichung: | Elsevier BV, 2012 |
Medientyp: | unknown |
ISSN: | 1369-8001 (print) |
DOI: | 10.1016/j.mssp.2012.03.002 |
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