An investigation on performance enhancement for KF post deposition treated CIGS solar cells fabricated by sputtering CIGS quaternary targets
In: Vacuum, Jg. 151 (2018-05-01), S. 233-236
Online
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Zugriff:
Copper Indium Gallium Selenide (Cu(In,Ga)Se2, CIGS) absorbers were fabricated by sputtering from quaternary CIGS targets and post-selenization. Potassium (K) was doped into absorbers by potassium fluoride post deposition treatment (KF-PDT). The performances of cells and the concentration distribution of alkali elements were investigated. Recombination of CIGS cells was also detected. The introduction of K led to an increase in efficiency from 11.1% for K-free cells to 14.9% for K-doped cells, with higher open-circuit voltage (Voc). For depth profile of alkali elements in absorbers, the content of Na decreased and the content of K increased after KF-PDT. The decrease of interface recombination at CIGS/CdS interfaces is considered to be the reason for the enhanced efficiency.
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An investigation on performance enhancement for KF post deposition treated CIGS solar cells fabricated by sputtering CIGS quaternary targets
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Autor/in / Beteiligte Person: | Ren, Guoan ; Lyu, Xunyan ; Gong, Qianming ; Zhao, Ming ; Zhang, Leng ; Sun, Rujun ; Wu, Yixuan ; Peng, Xiao ; Zhuang, Daming ; Wei, Yaowei |
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Zeitschrift: | Vacuum, Jg. 151 (2018-05-01), S. 233-236 |
Veröffentlichung: | Elsevier BV, 2018 |
Medientyp: | unknown |
ISSN: | 0042-207X (print) |
DOI: | 10.1016/j.vacuum.2018.02.023 |
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