Improving the efficiency of CIGS solar cells using an optimized p-type CZTSSe electron reflector layer
In: Journal of Materials Science: Materials in Electronics, Jg. 32 (2021-08-07), S. 22535-22547
Online
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Zugriff:
The insertion of an electron reflector is a suitable method to enhance the open‐circuit voltage (Voc) of copper indium gallium selenide (CIGS) solar cells. By the electron reflector, an electron barrier is formed at the conduction band, which can considerably reduce the recombination rate at the rear interface. In this paper, the copper zinc tin sulfide-selenide (Cu2ZnSn(S1−xSex)4) as an electron reflector is implemented on the thin‐film CIGS reference cell with a world record efficiency of 23.3%, then the properties of the proposed CIGS solar cell are numerically studied. The bandgap alignment at the Cu2ZnSn(S1−xSex)4/CIGS interface is adjusted by the selenium-to-sulfur ratio in the electron reflector layer. Simulation results show that an enhanced Voc was achieved in the CIGS solar cell with Cu2ZnSn(S1−xSex)4 (x
| Titel: |
Improving the efficiency of CIGS solar cells using an optimized p-type CZTSSe electron reflector layer
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| Autor/in / Beteiligte Person: | Gharibshahian, Iman ; Fatemeh Sadat Ahmadpanah ; Orouji, Ali A. |
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| Zeitschrift: | Journal of Materials Science: Materials in Electronics, Jg. 32 (2021-08-07), S. 22535-22547 |
| Veröffentlichung: | Springer Science and Business Media LLC, 2021 |
| Medientyp: | unknown |
| ISSN: | 1573-482X (print) ; 0957-4522 (print) |
| DOI: | 10.1007/s10854-021-06740-6 |
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