Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate
In: Key Engineering Materials, Jg. 301 (2006), S. 269-272
Online
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Zugriff:
This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700 °C from a precursor solution of Sr and RuCl3·2H2O for SRO and from a precursor solution of La(NO3)3 and Ni(CH3COO)2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650 °C, showing a good ferroelectricity of Pr=22μC/cm2 and Ec=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 108 switching cycles.
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Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate
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Autor/in / Beteiligte Person: | Miwa, Y. ; Fujimoto, M. ; Ohno, T. ; Suzuki, H. |
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Zeitschrift: | Key Engineering Materials, Jg. 301 (2006), S. 269-272 |
Veröffentlichung: | Trans Tech Publications, Ltd., 2006 |
Medientyp: | unknown |
ISSN: | 1662-9795 (print) |
DOI: | 10.4028/www.scientific.net/kem.301.269 |
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