Content addressable memory cell in quantum-dot cellular automata
In: Microelectronic Engineering, Jg. 163 (2016-09-01), S. 140-150
Online
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Zugriff:
Quantum-dot cellular automata (QCA) is an alternative to the CMOS circuits based on the characteristics of confinement and mutual repulsion between electrons. QCA can be used in designing ultra-dense, low-power, high speed and high-performance structures at nanoscales. Since memory is a very important part of each computer system, designing a high speed QCA memory is a significant issue. Content addressable memory (CAM) is a special type of memory structures which is used in a certain very fast searching applications. In this paper, a new five input minority gate-based CAM cell is introduced. QCADesigner has been used for simulation of the proposed structure and verifying its operation. Display Omitted An overview about basic features of QCA and CAM is presented.The new five-input QCA minority gate is introduced and then the structure of five-input minority gate based CAM cell using QCA cells is described.The effect of temperature fluctuations on output polarization of proposed CAM cell is investigated.
Titel: |
Content addressable memory cell in quantum-dot cellular automata
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Autor/in / Beteiligte Person: | Ahmad Habibizad Navin ; Hosseinzadeh, Mehdi ; Saeed Rasouli Heikalabad |
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Zeitschrift: | Microelectronic Engineering, Jg. 163 (2016-09-01), S. 140-150 |
Veröffentlichung: | Elsevier BV, 2016 |
Medientyp: | unknown |
ISSN: | 0167-9317 (print) |
DOI: | 10.1016/j.mee.2016.06.009 |
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