Investigation of the Deposition Behavior of a Lead Oxide Thin Film on Ir Substrates by Liquid Delivery Metallorganic Chemical Vapor Deposition
In: Electrochemical and Solid-State Letters, Jg. 9 (2006-02-01), S. C29- (3S.)
Online
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Zugriff:
Lead oxide thin films were deposited on Ir/IrO 2 /SiO 2 /Si substrates by liquid delivery metalorganic chemical vapor deposition at 525 °C in order to understand its influence on Pb-based ferroelectric film growth. The Ir substrates were variously pretreated in situ to control the surface oxidation state. Fully oxidized lead oxide films were grown on a nonoxidized Ir or fully oxidized IrO 2 surface. The lead oxide film growth on partially oxidized IrO x (x < 2) was hampered resulting in metallic Pb incorporation which may largely degrade the electrical properties of the film. IrO x oxidizes quickly consuming the supplied oxygen.
| Titel: |
Investigation of the Deposition Behavior of a Lead Oxide Thin Film on Ir Substrates by Liquid Delivery Metallorganic Chemical Vapor Deposition
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| Autor/in / Beteiligte Person: | Cheol Seong Hwang ; Park, Dong-Yeon ; Hyun Ju Lee ; Joon Seop Sim ; Jin Shi Zhao |
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| Zeitschrift: | Electrochemical and Solid-State Letters, Jg. 9 (2006-02-01), S. C29- (3S.) |
| Veröffentlichung: | The Electrochemical Society, 2006 |
| Medientyp: | unknown |
| ISSN: | 1944-8775 (print) ; 1099-0062 (print) |
| DOI: | 10.1149/1.2140495 |
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