A Highly Efficient CMOS Envelope Tracking Power Amplifier Using All Bias Node Controls
In: IEEE Microwave and Wireless Components Letters, Jg. 25 (2015-08-01), S. 517-519
Online
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Zugriff:
This letter presents a highly efficient CMOS power amplifier (PA) with adaptive envelope-tracking (ET) techniques. The linearity and efficiency of the PA are improved by ET-based techniques at the gate of the common-gate (CG), the gate of the common-source (CS), and the drain of the CG. The proposed CMOS ET PA is fabricated using a 0.18 $\mu{\rm m}$ CMOS technology with a printed circuit board (PCB) transformer which has a lower insertion loss than CMOS one. Without any help of additional resources, the CMOS PA delivers an average output power of 27.5 dBm with a power-added efficiency (PAE) of 42.5%, an error vector magnitude (EVM) of 2.5%, and an ${\rm ACLR}_{E-UTRA}$ of $-$ 36.5 dBc at 1.85 GHz for a long term evolution (LTE) signal with a bandwidth of 10 MHz and 7.5 dB peak-to-average power ratio (PAPR).
Titel: |
A Highly Efficient CMOS Envelope Tracking Power Amplifier Using All Bias Node Controls
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Autor/in / Beteiligte Person: | Park, Byungjoon ; Kwon, Myeongju ; Kim, Bumman ; Jin, Sangsu ; Kim, Jooseung ; Moon, Kyunghoon ; Kim, Dongsu |
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Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 25 (2015-08-01), S. 517-519 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2015 |
Medientyp: | unknown |
ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
DOI: | 10.1109/lmwc.2015.2440652 |
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