Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces
In: Materials Fundamentals of Gate Dielectrics ISBN: 1402030770; (2006-05-23)
Online
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Zugriff:
The primary driving force for the introduction of alternative gate dielectrics in advanced complementary metal oxide semiconductor (CMOS) devices is the dramatic increase in direct tunneling that occurs when the SiO2 physical thickness is reduced to less than 3 nm. For example the direct tunneling current at an oxide bias of 1 V is approximately 10−2 A/cm2 for an oxide physical thickness of 2.0 nm, and increases approximately one order of magnitude for each additional decrease of 0.2 nm thereby placing significant limitations on the performance and reliability of CMOS field effect transistor (FET) devices and integrated circuits (ICs). If the limitations for direct tunneling leakage current are taken to be 1–5 A/cm2 for high performance devices, and
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Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces
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| Autor/in / Beteiligte Person: | Lucovsky, Gerald |
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| Quelle: | Materials Fundamentals of Gate Dielectrics ISBN: 1402030770; (2006-05-23) |
| Veröffentlichung: | Springer-Verlag, 2006 |
| Medientyp: | unknown |
| ISBN: | 978-1-4020-3077-2 (print) ; 1-4020-3077-0 (print) |
| DOI: | 10.1007/1-4020-3078-9_4 |
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