Counter-thermal flow of holes in high-mobility LaNiO3 thin films

Measurements of electronic structure and theoretical models indicate that the Fermi surface of ${\mathrm{LaNiO}}_{3}$ (LNO) is predominantly holelike, with a small electron pocket. However, measurements of the Hall and Seebeck effects yield nominally opposite signs for the dominant charge carrier type, making charge transport in LNO puzzling. Here, we combine measurements of the Hall, Seebeck, and Nernst coefficients in high-mobility epitaxial LNO thin films, and resolve this puzzle by demonstrating that the negative Seebeck coefficient is generated by the diffusion of holes from cold to hot regions of LNO. We further examine this counter-thermal flow of holes by measuring the evolution of the Nernst coefficient from the diffusive to the ballistic regime, where the suppression of energy-dependent scattering leads to a reversal of the flow of holes.