Impact of Cu-deficient p-n heterointerface in CuGaSe2 photovoltaic devices
In: Applied Physics Letters, Jg. 118 (2021-03-29), S. 133901-133901
Online
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Zugriff:
It is expected that Cu-deficient phases of chalcopyrite CuGaSe2 (CGS), such as CuGa3Se5, will be used widely as functional materials in energy conversion devices. In this study, the effect of a Cu-deficient CGS layer (CDL) at the p-CGS/n-CdS interface was investigated. The presence of the CDL was found to have a significant effect on increasing the open-circuit voltage (Voc) of CGS photovoltaic devices. This result is contrary to the results obtained for CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) devices, which showed a decrease in Voc with the increasing CDL thickness. It was also found that the use of a thicker n-CdS layer is effective in increasing the short-circuit current density (Jsc) and Voc for CGS devices fabricated with a thick CDL. These trends are unique to CGS devices and are, thus, expected to offer unique and specific routes for improving wide-gap chalcopyrite photovoltaic device performance, in addition to offering a conventional strategy for adjusting the conduction band alignment of the p-CGS/n-buffer interface with proper n-buffer materials.
Titel: |
Impact of Cu-deficient p-n heterointerface in CuGaSe2 photovoltaic devices
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Autor/in / Beteiligte Person: | Ishizuka, Shogo |
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Zeitschrift: | Applied Physics Letters, Jg. 118 (2021-03-29), S. 133901-133901 |
Veröffentlichung: | AIP Publishing, 2021 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/5.0047062 |
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