A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications
In: Japanese Journal of Applied Physics, Jg. 55 (2016-03-10), S. 04EE06
Online
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Zugriff:
A fully CMOS compatible one-time programmable (OTP) cell with a novel intra-fin cell isolation (IFCI) structure on a FinFET CMOS process has been proposed. The IFCI OTP cell utilizes the field-enhanced dielectric breakdown at fin corners to perform a fast and low-voltage program operation. Moreover, an ultrasmall intra-fin cell-to-cell isolation is firstly introduced to markedly shrink the cell size by eliminating the area-consuming spacing of fin-to-fin isolation. The IFCI FinFET OTP with fast program speed, excellent read disturb immunity, and reliable data retention is a promising solution for logic nonvolatile memory (NVM) technology in advanced CMOS nodes.
Titel: |
A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications
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Autor/in / Beteiligte Person: | Chrong Jung Lin ; Ping Chun Peng ; Woan Yun Hsiao ; Jo En Yuan ; King, Ya-Chin ; Chen, Yu-Zheng |
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Zeitschrift: | Japanese Journal of Applied Physics, Jg. 55 (2016-03-10), S. 04EE06 |
Veröffentlichung: | IOP Publishing, 2016 |
Medientyp: | unknown |
ISSN: | 1347-4065 (print) ; 0021-4922 (print) |
DOI: | 10.7567/jjap.55.04ee06 |
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