Preparation and Properties of Highly Oriented LaNiO3Thin Films on Different Substrates
In: Ferroelectrics, Jg. 357 (2007-09-28), S. 53-57
Online
unknown
Zugriff:
Highly (100) and (110) oriented LaNiO 3 (LNO) thin films were prepared on various substrates, including Si (100), Si (111), SiO2/Si, Si3N4/Si by a metal-organic decomposition (MOD) method. Two different thermal processes were employed to crystallize LNO films. XRD analysis showed different thermal processes led to different preferential orientations of LNO films. The orientation dependence of LNO films on annealing process has been investigated. FESEM and AFM images show LNO films are uniform and crack-free. Low resistivity and high infrared absorbability make LNO thin film a promising electrode and infrared absorbed material for IR detector applications.
Titel: |
Preparation and Properties of Highly Oriented LaNiO3Thin Films on Different Substrates
|
---|---|
Autor/in / Beteiligte Person: | Ren, Wei ; Lei, Hongsheng ; Shi, Peng ; Yan, Xin ; Yao, Xi ; Yang, Xian ; Wu, Xiaoqing |
Link: | |
Zeitschrift: | Ferroelectrics, Jg. 357 (2007-09-28), S. 53-57 |
Veröffentlichung: | Informa UK Limited, 2007 |
Medientyp: | unknown |
ISSN: | 1563-5112 (print) ; 0015-0193 (print) |
DOI: | 10.1080/00150190701527878 |
Schlagwort: |
|
Sonstiges: |
|