Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receivers
In: International Journal of RF and Microwave Computer-Aided Engineering, Jg. 16 (2006-09-01), S. 444-453
Online
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Zugriff:
This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-μm 6M1P CMOS technology from the system viewpoint for the first time to provide a higher gain at the high band in order to compensate the high-band signal's extra loss over the air transmission. The LNA drains 6.21 mA of current from a 1.5-V supply voltage and achieves voltage gains of 14 and 22 dB, input S11 of 15 and 18 dB, and noise figures of 2.45 and 2.51 dB at 2.4 and 5.2 GHz, respectively. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.
Titel: |
Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receivers
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Autor/in / Beteiligte Person: | Wong, P. F. ; Yue Ping Zhang ; Kok Wai Chew |
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Zeitschrift: | International Journal of RF and Microwave Computer-Aided Engineering, Jg. 16 (2006-09-01), S. 444-453 |
Veröffentlichung: | Hindawi Limited, 2006 |
Medientyp: | unknown |
ISSN: | 1099-047X (print) ; 1096-4290 (print) |
DOI: | 10.1002/mmce.20164 |
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