A 180 mV 81.2%-Efficient Switched-Capacitor Voltage Doubler for IoT Using Self-Biasing Deep N-Well in 16-nm CMOS FinFET
In: IEEE Solid-State Circuits Letters, Jg. 1 (2018-07-01), S. 158-161
Online
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Zugriff:
We introduce the first monolithic step-up dc–dc converter operating at deep sub-1 V (i.e., 0.18–0.4 V) that outputs significant power for Internet-of-Things with a peak power efficiency of 81.2% at 50 $ {\mu }\text{W}$ output power for the 0.18-V input and 87.1% at 300 $ {\mu }\text{W}$ output power for 0.4 V. It is implemented in 16-nm FinFET CMOS and uses an MOS transistor as a high-density flying capacitor for energy conversion. The capacitor is arranged in a self-biased deep N-well topology, which enhances the overall efficiency by 9.5%. An integrated time-to-digital converter verifies the dc–dc output quality.
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A 180 mV 81.2%-Efficient Switched-Capacitor Voltage Doubler for IoT Using Self-Biasing Deep N-Well in 16-nm CMOS FinFET
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Autor/in / Beteiligte Person: | Chang, Chih-Hsien ; Yuan, Min-Shueh ; Lin, Yu-Tso ; Robert Bogdan Staszewski ; Pourmousavian, Naser ; Li, Chao-Chieh |
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Zeitschrift: | IEEE Solid-State Circuits Letters, Jg. 1 (2018-07-01), S. 158-161 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2018 |
Medientyp: | unknown |
ISSN: | 2573-9603 (print) |
DOI: | 10.1109/lssc.2018.2889422 |
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