Wideband Bandpass Filter for 5G Millimeter- Wave Application in 45-nm CMOS Silicon-on-Insulator
In: IEEE Electron Device Letters, Jg. 42 (2021-08-01), S. 1244-1247
Online
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Zugriff:
In this letter, a wideband bandpass filter for 5G application is proposed. The filter is implemented in GF 45-nm CMOS SOI (silicon-on-insulator) and is a 4-pole/ 4-zero design which greatly enhance the filter selectivity and out-of-band rejection. Measurements show a filter 3-dB bandwidth of 22-44 GHz, and covers the millimeter-wave 5G 26/28/39 GHz bands. The minimum insertion loss is 1.5 dB with a return loss better than 10 dB and a filter size of 0.07 mm2. The work shows that wideband high-performance filter can be integrated as part of the wideband/multiband RF front-end on CMOS SOI.
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Wideband Bandpass Filter for 5G Millimeter- Wave Application in 45-nm CMOS Silicon-on-Insulator
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Autor/in / Beteiligte Person: | Rebeiz, Gabriel M. ; Gao, Li |
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Zeitschrift: | IEEE Electron Device Letters, Jg. 42 (2021-08-01), S. 1244-1247 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1558-0563 (print) ; 0741-3106 (print) |
DOI: | 10.1109/led.2021.3089656 |
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