Growth of III/V Materials on Large Area Silicon
In: ECS Transactions, Jg. 28 (2010-04-16), S. 233-236
Online
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Zugriff:
The compound semiconductor industry has seen tremen-dous progress in applications ranging from high-power electronics to optoelectronics. However, most of the de-vices being produced today are discrete due to the com-paratively high cost of wafer area and the low level of integration experience compared to the silicon industry. Hence, co-integration with mainstream silicon manufac-turing processes in which the compound semiconductor device is selectively deposited in areas where needed while the rest of the chip is kept in standard silicon VLSI technology is seen as one of the most promising ways to harvest the potential of III-V compounds.
Titel: |
Growth of III/V Materials on Large Area Silicon
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Autor/in / Beteiligte Person: | Ngoc Duy Nguyen ; Heuken, Michael ; Schineller, Bernd |
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Zeitschrift: | ECS Transactions, Jg. 28 (2010-04-16), S. 233-236 |
Veröffentlichung: | The Electrochemical Society, 2010 |
Medientyp: | unknown |
ISSN: | 1938-6737 (print) ; 1938-5862 (print) |
DOI: | 10.1149/1.3367955 |
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