Recent R&D progress in solar frontier's small-sized Cu(InGa)(SeS)2 solar cells
In: 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014-06-01
Online
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Zugriff:
Our resent achievement of the record breaking 20.9% efficiency (independently confirmed by Fraunhofer ISE) with small-sized CIS-based solar cell will be discussed in this paper by means of comparison with our previous result of 19.7%. The new record was mainly achieved by an improved J sc arising from modified depth profile of the absorber layer and the doping concentration of the transparent conductive oxide (TCO) layer. Combination of these two modifications drastically enhances light absorption at a longer wavelength region, leading to J sc improvement of about 3 mA/cm2 without losing V oc nor FF. This new 20.9% efficiency record resulted from a CIGS cell cut from a 30 cm by 30 cm substrate produced using the same method and materials we use in our factories, sputtering-selenization formation method with Cd-free buffer layer.
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Recent R&D progress in solar frontier's small-sized Cu(InGa)(SeS)2 solar cells
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| Autor/in / Beteiligte Person: | Yoneyama, Nobutaka ; Sugimoto, Hiroki ; Yamaguchi, Koji ; Nakamura, Motoshi ; Kato, Takuya ; Horiguchi, Kyouhei ; Iwata, Yasuaki |
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| Zeitschrift: | 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014-06-01 |
| Veröffentlichung: | IEEE, 2014 |
| Medientyp: | unknown |
| DOI: | 10.1109/pvsc.2014.6925346 |
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