Mechanism for formation of the XeI(B) excimer by photoexcitation of an Xe–I2mixture
In: Soviet Journal of Quantum Electronics, Jg. 13 (1983-04-30), S. 516-519
Online
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Zugriff:
An investigation was made of the mechanism of formation of the XeI(B) excimer by photoexcitation of an Xe–I2 mixture in the λ =110–195 nm range. Two bands, B→X (λ ~250 nm) and B→A (λ ~320 nm) were recorded in the luminescence spectrum of the XeI excimer. It is shown that when XeI luminescence is quenched by xenon, an Xe2 excimer is formed, its luminescence being emitted in the λ ~300–400 nm range. It is shown that the efficiency of the reaction between an excited iodine molecule and a xenon atom resulting in the formation of an XeI(B) excimer depends on the excitation energy of the iodine molecule. The maximum luminescence quantum efficiency of XeI(B→X) is achieved by optical pumping in the λ =183 nm range.
Titel: |
Mechanism for formation of the XeI(B) excimer by photoexcitation of an Xe–I2mixture
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Autor/in / Beteiligte Person: | L D Mikheev ; Bibinov, N. K. ; Vinogradov, I. P. |
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Zeitschrift: | Soviet Journal of Quantum Electronics, Jg. 13 (1983-04-30), S. 516-519 |
Veröffentlichung: | IOP Publishing, 1983 |
Medientyp: | unknown |
ISSN: | 0049-1748 (print) |
DOI: | 10.1070/qe1983v013n04abeh004207 |
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