Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration
In: IEEE Microwave and Wireless Components Letters, Jg. 20 (2010-07-01), S. 402-404
Online
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Zugriff:
This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched input impedance over a wide bandwidth. A 2-10 GHz LNA is designed and fabricated using a commercial 0.18 RF-CMOS process to verify the feasibility of our proposed method. In the intended bandwidth, this LNA has matched input impedance, 20 dB power gain, and 2.4-3.4 dB noise figure, with 25.65 mW power consumption.
| Titel: |
Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration
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| Autor/in / Beteiligte Person: | Jou, Christina F. ; Hu, Robert ; Wu, Hui-I |
| Link: | |
| Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 20 (2010-07-01), S. 402-404 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2010 |
| Medientyp: | unknown |
| ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
| DOI: | 10.1109/lmwc.2010.2049440 |
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