A duplex current-reused CMOS LNA with complementary derivative superposition technique
In: International Journal of Circuit Theory and Applications, Jg. 45 (2016-06-24), S. 110-119
Online
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Zugriff:
Summary A duplex current-reused complementary metal–oxide–semiconductor low-noise amplifier (LNA) is proposed for 2.5-GHz application. The duplex current-reused topology with equivalent three common-source gain stages cascaded is utilized to fulfil the low-power consumption and high gain simultaneously. The complementary derivative superposition linearization technique with bulk-bias control is employed to improve the linearity performance with large-signal swing and to extend the auxiliary transistors bias-control range. The proposed LNA is fabricated in a 0.18-um 1P5M complementary metal–oxide–semiconductor process and consumes a 3.13-mA quiescent current from a 1.5 V voltage supply. The measurement results show that the proposed LNA achieves power gain of 28.1 dB, noise figure of 1.64 dB, input P1dB and IIP3 of −19.6 dBm and 3.2 dBm, respectively, while the input and output return loss is 19.2 dB and 18.4 dB. Copyright © 2016 John Wiley & Sons, Ltd.
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A duplex current-reused CMOS LNA with complementary derivative superposition technique
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Autor/in / Beteiligte Person: | Zou, Shichang ; He, Jun ; Dai, Ruofan ; Zheng, Yunlong ; Kong, Weiran |
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Zeitschrift: | International Journal of Circuit Theory and Applications, Jg. 45 (2016-06-24), S. 110-119 |
Veröffentlichung: | Wiley, 2016 |
Medientyp: | unknown |
ISSN: | 0098-9886 (print) |
DOI: | 10.1002/cta.2235 |
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