Lattice-related understanding regarding V-doping induced ZnO n-to-p type shift within LCT scope
In: Journal of Alloys and Compounds, Jg. 691 (2017), S. 545-553
Online
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Zugriff:
Nowadays, experiments based on possible controlling of the electrical conductivity of ZnO material as thin film and nano-forms are in progress. To reach especially p-type ZnO remains a principal challenge for many of research teams. Also, there are still problems concerning the stability of the p-type conductivity of this binary oxide. Herein, we reported a first principal explanation under the well known Lattice Compatibility Theory (LCT) to a noticeable n/p shift of 3% vanadium doped ZnO sprayed thin films published recently [1]. This paper gives plausible understanding of this change of ZnO character found by means of ethanol gas sensing. Moreover, the photoluminescence study of V doped ZnO thin films reinforce the change in their electrical character because such doping may behave both as a donor and as an acceptor in ZnO matrix.
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Lattice-related understanding regarding V-doping induced ZnO n-to-p type shift within LCT scope
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Autor/in / Beteiligte Person: | Amlouk, Mosbah ; Amlouk, A. ; Mhamdi, A. ; Hendi, A.A. ; Saafi, I. ; Boubaker, K. |
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Zeitschrift: | Journal of Alloys and Compounds, Jg. 691 (2017), S. 545-553 |
Veröffentlichung: | Elsevier BV, 2017 |
Medientyp: | unknown |
ISSN: | 0925-8388 (print) |
DOI: | 10.1016/j.jallcom.2016.08.294 |
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