Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances
In: IEEE Transactions on Microwave Theory and Techniques, Jg. 61 (2013-12-01), S. 4520-4533
Online
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Zugriff:
In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies.
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Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances
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Autor/in / Beteiligte Person: | Liao, Hsin-Chiang ; Wang, Huei ; Hsiao, Yuan-Hung ; Kao, Jui-Chih ; Tsai, Zuo-Min |
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Zeitschrift: | IEEE Transactions on Microwave Theory and Techniques, Jg. 61 (2013-12-01), S. 4520-4533 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2013 |
Medientyp: | unknown |
ISSN: | 1557-9670 (print) ; 0018-9480 (print) |
DOI: | 10.1109/tmtt.2013.2288223 |
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