3D TSV based high frequency components for RF IC and RF MEMS applications
In: 2016 IEEE International 3D Systems Integration Conference (3DIC), 2016-11-01
Online
unknown
Zugriff:
We demonstrate and review the unique fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) technology developed by Fraunhofer EMFT in high-resitivity silicon substrates. The proposed process flow is fully compatible with both CMOS and MEMS technology, allowing 3D heterogeneous integration of highperformance, low power, compact tunable RF front-ends. We have assessed the figures of merit of the technology for RF functionality by fabricating and characterizing different configurations for CPWs with TSV transitions, mm-wave antennas and LC resonators as well as record-high performance wideband out-of-plane micro-inductors.
Titel: |
3D TSV based high frequency components for RF IC and RF MEMS applications
|
---|---|
Autor/in / Beteiligte Person: | Ramm, Peter ; Ocket, Ilja ; Ionescu, Adrian M. ; Enayati, Amin ; Weber, Josef ; Klumpp, Armin ; Mariazel Maqueda Lopez ; Vitale, Wolfgang A. ; Merkel, Reinhard ; Walter De Raedt ; Fernandez-Bolanos, Montserrat |
Link: | |
Zeitschrift: | 2016 IEEE International 3D Systems Integration Conference (3DIC), 2016-11-01 |
Veröffentlichung: | IEEE, 2016 |
Medientyp: | unknown |
DOI: | 10.1109/3dic.2016.7970030 |
Schlagwort: |
|
Sonstiges: |
|