Highly Reliable Electrocaloric Behaviors of Antiferroelectric Al:ZrO2 Thin Films for Solid-State Cooling in Integrated Circuits
In: IEEE Transactions on Electron Devices, Jg. 68 (2021-12-01), S. 6352-6358
Online
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Zugriff:
Heat generation in integrated circuits (ICs) has become a severe issue, which limits the utilization of miniaturized semiconductor devices in high-density 3-D IC technologies. Herein, Al₂O₃ was doped in ZrO₂ thin films by plasma-enhanced atomic layer deposition (PEALD) to enhance their antiferroelectric (AFE) characteristics for highly reliable electrocaloric (EC) cooling applications. The cycling endurance in AFE behaviors of the Al:ZrO₂ thin films under a high electric field of 5 MV/cm was significantly improved because of the enlargement of the energy bandgap with high resistance in trap-induced leakage current. Hence, the reliability of the EC effect of the 1% Al:ZrO₂ thin film was examined with a negligible change in adiabatic temperature change (Δ T) of 2.6% after a cycling endurance test of 10⁶ cycles. With the competitive cycling reliabilities in AFE and EC behaviors, devices with optimized Al₂O₃-incorporated ZrO₂ thin films show significant potential for future nanoscale cooling systems in chip-level ICs.
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Highly Reliable Electrocaloric Behaviors of Antiferroelectric Al:ZrO2 Thin Films for Solid-State Cooling in Integrated Circuits
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Autor/in / Beteiligte Person: | Liu, Yu-Hua ; Lu, Hsin-Chun ; Lin, Li-Hsiang ; Lu, Shao-Hao ; Wang, Jer-Chyi |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 68 (2021-12-01), S. 6352-6358 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1557-9646 (print) ; 0018-9383 (print) |
DOI: | 10.1109/ted.2021.3119532 |
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