All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology
In: IEEE Electron Device Letters, Jg. 42 (2021-04-01), S. 541-544
Online
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Zugriff:
All-CMOS monolithic microdisplay technologies have been attracting attention due to their direct integration of light-emitting pixel arrays and driving circuits on a single silicon substrate. Improvements to optical power efficiency have been a hot spot for all-silicon microdisplay technologies. MOS-like gate-control structure avalanche-mode light-emitting diodes (AMLEDs) that employ hot-carrier electroluminescence to produce light emission are used to enhance the optical power efficiency of pixel units. A semi-active matrix mode is used to reduce the power consumption of driver circuits. A $100\times 100$ pixel array with an all-CMOS monolithic microdisplay system is demonstrated using standard $0.18\mu \text{m}$ CMOS technology. The optical emission power and the breakdown voltage of the proposed AMLEDs are increased by 139.2% and reduced by more than 67%, respectively. The optical-power efficiency is $5.98\times 10 ^{{-7}}$ which is comparable to the best reported so far in all-CMOS monolithic microdisplay chip. With its significant optical-power efficiency, the proposed microdisplay technology has broad application prospects in near-to-eye display and head mounted displays (HMDs).
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All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology
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Autor/in / Beteiligte Person: | Luo, Qian ; Xu, Kaikai ; Chen, Yanxu ; Zhang, Hongqiao ; Wu, Kejun |
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Zeitschrift: | IEEE Electron Device Letters, Jg. 42 (2021-04-01), S. 541-544 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1558-0563 (print) ; 0741-3106 (print) |
DOI: | 10.1109/led.2021.3059781 |
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