Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode
In: IEEE Transactions on Electron Devices, Jg. 67 (2020-11-01), S. 5059-5062
Online
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Zugriff:
In this study, vanadium (V) was used as a top electrode in a vanadium oxide (VOx)-based selector device. Electroforming was performed to form a threshold region with metal–insulator transition (MIT) at both V electrode and VOx switching layers without annealing during fabrication. The simple V/VOx/TiN structure obtained was scalable and compatible with complementary metal–oxide–semiconductors. All electrical measurement results indicated that V/VOx/TiN selectors exhibited excellent characteristics such as high uniformity, a short switching time of 60 ns, a robust endurance of >109 cycles, and high reliability and stability. Both the simulation analysis and current fitting method were applied to further validate experimental results. Consequently, we developed a nanoscale V/VOx/TiN selector with excellent characteristics, which can be potentially applied to future highdensity crossbar memory devices to overcome sneak-path problems.
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Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode
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Autor/in / Beteiligte Person: | Lin, Chun-Chu ; Lin, Chih-Yang ; Tseng, Yi-Ting ; Lee, Ching-Ting ; Chang, Ting-Chang ; Hsin Ying Lee ; Chen, Po-Hsun ; Chen, Wen-Chung ; Yeh, Tsung-Han |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 67 (2020-11-01), S. 5059-5062 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2020 |
Medientyp: | unknown |
ISSN: | 1557-9646 (print) ; 0018-9383 (print) |
DOI: | 10.1109/ted.2020.3019773 |
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