Ultrathin Silicon Chips of Arbitrary Shape by Etching Before Grinding
In: Journal of Microelectromechanical Systems, Jg. 20 (2011-08-01), S. 791-793
Online
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Zugriff:
A complementary-metal-oxide-semiconductor-compatible fabrication technique for ultrathin silicon chips of arbitrary shape is reported. It combines deep reactive ion etching and wafer grinding to define the in-plane geometry and thickness of the chips, respectively. Neural probes with shaft lengths up to 12 mm and thicknesses down to 25 μm were fabricated.
Titel: |
Ultrathin Silicon Chips of Arbitrary Shape by Etching Before Grinding
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Autor/in / Beteiligte Person: | Herwik, Stanislav ; Paul, Oliver ; Ruther, Patrick |
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Zeitschrift: | Journal of Microelectromechanical Systems, Jg. 20 (2011-08-01), S. 791-793 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2011 |
Medientyp: | unknown |
ISSN: | 1941-0158 (print) ; 1057-7157 (print) |
DOI: | 10.1109/jmems.2011.2148159 |
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