Design of a K-Band High-Efficiency Power Amplifier in 45 nm SOI CMOS Technology
In: Integrated Ferroelectrics, Jg. 217 (2021-06-13), S. 95-106
Online
unknown
Zugriff:
This paper presents a high efficiency K-band CMOS power amplifier (PA) in GlobalFoundries (GF) 45 nm SOI CMOS technology for 5 G applications. Compared with an ordinary two-stage PA, the PA uses a ...
Titel: |
Design of a K-Band High-Efficiency Power Amplifier in 45 nm SOI CMOS Technology
|
---|---|
Autor/in / Beteiligte Person: | Liying, Chen ; Hao, Wang ; Zhao, Junfa ; Simin, Zhang |
Link: | |
Zeitschrift: | Integrated Ferroelectrics, Jg. 217 (2021-06-13), S. 95-106 |
Veröffentlichung: | Informa UK Limited, 2021 |
Medientyp: | unknown |
ISSN: | 1607-8489 (print) ; 1058-4587 (print) |
DOI: | 10.1080/10584587.2021.1911300 |
Schlagwort: |
|
Sonstiges: |
|