Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories (2020 Nanotechnology 31 445205)
In: Nanotechnology, Jg. 31 (2020-09-24), S. 499601-499601
Online
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Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories (2020 Nanotechnology 31 445205)
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Autor/in / Beteiligte Person: | Beilliard, Yann ; Drouin, Dominique ; Brousseau, Frédéric ; Ecoffey, Serge ; Paquette, François ; Alibart, Fabien |
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Zeitschrift: | Nanotechnology, Jg. 31 (2020-09-24), S. 499601-499601 |
Veröffentlichung: | IOP Publishing, 2020 |
Medientyp: | unknown |
ISSN: | 1361-6528 (print) ; 0957-4484 (print) |
DOI: | 10.1088/1361-6528/abb301 |
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