Multilayer Decoupling Capacitor using Stacked Layers of BST and LNO

Barium strontium titanate (BST) and lanthanum nickelate (LNO) are often used in conjunction to create high energy density capacitive devices. The LNO seeds and buffers the BST, reducing the effect of its dielectric "dead" layer. We show that this concept can be extended to a multilayer capacitor, where the second metal-insulator-metal stack is grown on top of, and buffered by, the first layer. Although this only doubles the effective area of the capacitor, the capacitance increases to 220%, 20% greater than the increase in surface area. Additional capacitive layers can be deposited to further take advantage of this effect.