A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology

A novel super-halo doping concept for nano-scale CMOS application is presented, which features a counter ion implantation performed through the gaps formed at the gate edges. The implantation forms two high localized halo doping (LHD) zones below the source and drain regions adjacent to the channel. The LHD zones effectively shield the source and channel regions from the drain field penetration, ensuring a much improved short-channel effect. The excellent performances of the LHD devices are verified by simulation results. The fabrication process for the LHD devices is also suggested and discussed.