A radiation-hardened standard cell library for commercial 0.18 µm CMOS technology
In: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014-10-01
Online
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Zugriff:
The high-performance standard cell library is very important for the ASIC design. A radiation-hardened standard cell library can significantly enhance the reliability and performance of digital circuits that work in a hard radiation environment. We have developed a radiation-hardened standard cell library for the commercial 0.18µm CMOS technology. Some of the radiation-hardened techniques (such as the temporal filtering structure, the P+/N+ guard rings) have been discussed, validated and used for the standard cells. Also we have characterized this RH standard cell library to support the RTL to GDSII ASIC design flow.
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A radiation-hardened standard cell library for commercial 0.18 µm CMOS technology
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Autor/in / Beteiligte Person: | Yang, Weidong ; Chen, Guangbing ; Liu, Jia ; Yang, Jing ; Yuxin, Wang ; Li, Yao ; Li, Ruzhang ; Zhang, Ruitao ; Fu, Dongbing ; Feng, Xiaogang |
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Zeitschrift: | 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014-10-01 |
Veröffentlichung: | IEEE, 2014 |
Medientyp: | unknown |
DOI: | 10.1109/icsict.2014.7021667 |
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