Broadband CMOS Schottky-Diode Star Mixer Using Coupled-CPW Marchand Dual-Baluns
In: IEEE Microwave and Wireless Components Letters, Jg. 27 (2017-05-01), S. 500-502
Online
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Zugriff:
A broadband CMOS Marchand dual-balun using stacked broadside couplers for low odd-mode impedance with surrounded ground planes for high even-mode impedance is employed to achieve a high coupling coefficient needed for a Marchand dual-balun. The demonstrated Marchand dual-balun using 0.18- $\mu \text{m}$ CMOS technology is designed at 30-GHz center frequency with an insertion loss of 11.5- and 10-dB input return loss bandwidth of over 120%. The bandwidth of 1-dB amplitude imbalance and 10° phase difference are over 100%. A broadband CMOS Schottky-diode star mixer is implemented with two Marchand dual-baluns at RF and local oscillator (LO) ports. As a result, the Schottky-diode star mixer shows conversion loss of 14 dB, LO-to-RF isolation of 26 dB, LO-to-IF isolation of 45 dB, and RF-to-IF isolation of 42 dB within 27-GHz operating bandwidth, respectively.
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Broadband CMOS Schottky-Diode Star Mixer Using Coupled-CPW Marchand Dual-Baluns
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Autor/in / Beteiligte Person: | Hsiao, Yu-Chih ; Meng, Chinchun ; Peng, Yong-Hao |
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Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 27 (2017-05-01), S. 500-502 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2017 |
Medientyp: | unknown |
ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
DOI: | 10.1109/lmwc.2017.2690854 |
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