D-MOSFET Structure
In: Advanced Power MOSFET Concepts ISBN: 9781441959164; (2010)
Online
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Zugriff:
The first power MOSFET structure commercially introduced by the power semiconductor industry was the double-diffused or D-MOSFET structure. The channel length of this device could be reduced to sub-micron dimensions by controlling the diffusion depths of the P-base and N+ source regions without resorting to expensive lithography tools [1]. The device fabrication process relied up on the available planar gate technology used to manufacture CMOS integrated circuits. These devices found applications in power electronic circuits that operated at low (
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D-MOSFET Structure
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Autor/in / Beteiligte Person: | B. Jayant Baliga |
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Quelle: | Advanced Power MOSFET Concepts ISBN: 9781441959164; (2010) |
Veröffentlichung: | Springer US, 2010 |
Medientyp: | unknown |
ISBN: | 978-1-4419-5916-4 (print) |
DOI: | 10.1007/978-1-4419-5917-1_2 |
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