Novel Exploration of Flat-Band Voltage Manipulation by Nitrogen Plasma Treatment for Advanced High-k/Metal-Gate CMOS Technology
In: ECS Transactions, Jg. 89 (2019-04-23), S. 55-59
Online
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Zugriff:
This work presents a novel exploration of flat-band voltage (VFB ) manipulation by nitrogen plasma treatment (NPT) in the high-k/metal-gate (HKMG) Metal-Oxide-Semiconductor Capacitor (MOSCAP) for the scaling-down in further CMOS fabrication technology. Significant VFB shifts were achieved from−220 mV to +60 mV and from +130 mV to+420 mV for P- and N-MOSCAPs, respectively, with different RF powers settings. One unique modulation mechanism can successfully address the difference of P- and N-device variation by the NPT process, and thus be used to adjust the threshold voltage of the MOSCAPs in P-/N-logic devices scaled beyond 7-nm technology node.
Titel: |
Novel Exploration of Flat-Band Voltage Manipulation by Nitrogen Plasma Treatment for Advanced High-k/Metal-Gate CMOS Technology
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Autor/in / Beteiligte Person: | Yin, Huaxiang ; Yao, Jiaxin ; Hou, Zhaozhao ; Wu, Zhenhua |
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Zeitschrift: | ECS Transactions, Jg. 89 (2019-04-23), S. 55-59 |
Veröffentlichung: | The Electrochemical Society, 2019 |
Medientyp: | unknown |
ISSN: | 1938-5862 (print) ; 1938-6737 (print) |
DOI: | 10.1149/08903.0055ecst |
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