Poly-SiGe-based MEMS Xylophone Bar Magnetometer
In: 2012 IEEE Sensors, 2012-10-01
Online
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Zugriff:
This paper presents the design, fabrication and preliminary characterization of highly sensitive MEMS-based Xylophone Bar Magnetometers (XBMs) realized in imec's poly-SiGe MEMS technology. Key for our Lorentz force driven capacitively sensed resonant sensor are the combination of reasonably high Q-factor and conductivity of imec's poly-SiGe, our optimized multiphysics sensor design targeting the maximization of the Q-factor in a wide temperature range as well as our proprietary monolithic above-CMOS integration and packaging schemes. Prototypes 3-axis devices were fabricated and characterized. We present optical vibrometer and electrical S-parameter measurements of XBMs performed in vacuum with a reference magnet at increasing sensor separation. The optical oscillation amplitude is well correlated with the magnetic field amplitude. The electrical 2-port measurements, 1st port as Lorentz force actuator and 2nd port as capacitive sensor, also reproduces the designed magnetic field dependence. This opens the way towards the on-chip integration of small footprint extremely sensitive magnetometers.
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Poly-SiGe-based MEMS Xylophone Bar Magnetometer
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Autor/in / Beteiligte Person: | Rottenberg, Xavier ; Lamy, Hervé ; Rochus, Véronique ; Tilmans, Hendrikus ; Chen, C. ; Rochus, Pierre ; Jansen, Roelof ; Ranvier, S. |
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Zeitschrift: | 2012 IEEE Sensors, 2012-10-01 |
Veröffentlichung: | IEEE, 2012 |
Medientyp: | unknown |
DOI: | 10.1109/icsens.2012.6411484 |
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