An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-μm CMOS
In: IEEE Journal of Solid-State Circuits, Jg. 55 (2020-09-01), S. 2489-2497
Online
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Zugriff:
This article presents an ultra-low-noise differential relaxation oscillator that achieves a phase noise figure of merits (FoMs) of 157.7 and 162.1 dBc/Hz, respectively, at 1- and 100-kHz frequency offsets. The oscillator is inherently robust against $1/f$ noise, while swing-boosting minimizes the phase noise arising out of thermal noise. Furthermore, an inverter-based differential comparator maximizes power efficiency, enabling FoMs close to the fundamental limits. Operating at 10.5 MHz and consuming 219.8 $\mu \text{W}$ from a 1.4-V supply, the oscillator achieves a period jitter of 9.86 psrms, equivalent to a relative jitter of 0.01%. The oscillator occupies an active area of 0.015 mm2 in a 0.18- $\mu \text{m}$ standard CMOS process.
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An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-μm CMOS
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Autor/in / Beteiligte Person: | George, Arup K. ; Je, Minkyu ; Lee, Junghyup |
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Zeitschrift: | IEEE Journal of Solid-State Circuits, Jg. 55 (2020-09-01), S. 2489-2497 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2020 |
Medientyp: | unknown |
ISSN: | 1558-173X (print) ; 0018-9200 (print) |
DOI: | 10.1109/jssc.2020.2987681 |
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