3.7 mW 24 GHz LNA with 10.1 dB gain and 4.5 dB NF in 0.18 [micro sign]m CMOS technology
In: Electronics Letters, Jg. 46 (2010), S. 1310-1310
Online
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Zugriff:
A low-power 24 GHz low-noise amplifier (LNA) with flat and low noise figure (NF) using standard 0.18 µm CMOS technology is demonstrated. The low-power LNA consists of three cascaded common-source stages biased in the weak inversion region. To achieve sufficient gain, a series peaking inductor (LG3) was added to the input terminal of the third stage to boost the gain (simulation shows a 78.9% improvement (from 5.7 to 10.2 dB) at 24 GHz). Flat and low NF was achieved by adopting a slightly under-damped Q-factor for the second-order NF frequency response. Shunt RC feedback in conjunction with a low-Q RL load were adopted in the third stage to achieve excellent output impedance matching. The 24 GHz LNA achieved S21 of 10.1 dB and NF of 4.5 dB with a power dissipation (PDC) of only 3.7 mW, the lowest PDC ever reported for a 24 GHz-band CMOS LNA with S21 greater than 10 dB.
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3.7 mW 24 GHz LNA with 10.1 dB gain and 4.5 dB NF in 0.18 [micro sign]m CMOS technology
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Autor/in / Beteiligte Person: | Lee, Jen-How ; Lin, Y.-S. ; Chen, Chi-Chen |
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Zeitschrift: | Electronics Letters, Jg. 46 (2010), S. 1310-1310 |
Veröffentlichung: | Institution of Engineering and Technology (IET), 2010 |
Medientyp: | unknown |
ISSN: | 0013-5194 (print) |
DOI: | 10.1049/el.2010.1983 |
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