High V oc in (Cu,Ag)(In,Ga)Se2 Solar Cells
In: IEEE Journal of Photovoltaics, Jg. 7 (2017-11-01), S. 1789-1794
Online
unknown
Zugriff:
In this contribution, we show that silver substitution for copper in Cu(In,Ga)Se2 (CIGS) to form (Ag,Cu)(In,Ga)Se2 (ACIGS) leads to a reduction of the voltage loss expressed as Eg/q – V oc. This, in turn, leads to higher device efficiencies as compared to similar CIGS devices without Ag. We report $V_{{\rm{oc}}}$ at 814 mV at a conversion efficiency of 21% for our best ACIGS device with 20% of the group I element consisting of silver. Comparing ACIGS and CIGS devices with the same Ga/(Ga + In) ratio, the ACIGS devices exhibit about 0.05 eV higher bandgap. Alkali postdeposition treatment with KF leads to improvements in efficiency both for CIGS and ACIGS, but we find that the dose of KF needed for optimum device for ACIGS is 10–20% of the dose used for CIGS.
| Titel: |
High V oc in (Cu,Ag)(In,Ga)Se2 Solar Cells
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| Autor/in / Beteiligte Person: | Nina Shariati Nilsson ; Jarmar, Tobias ; Stolt, Olof ; Shafarman, William N. ; Edoff, Marika ; Hogstrom, Daniel ; Lundberg, Olle ; Stolt, Lars ; Wallin, Erik |
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| Zeitschrift: | IEEE Journal of Photovoltaics, Jg. 7 (2017-11-01), S. 1789-1794 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2017 |
| Medientyp: | unknown |
| ISSN: | 2156-3403 (print) ; 2156-3381 (print) |
| DOI: | 10.1109/jphotov.2017.2756058 |
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