Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)
In: SPIE Proceedings, 1991-03-01
Online
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Zugriff:
Thin low doped GaAs layers were deposited on Si(100) substrates using molecular beam epitaxy (MBE). The samples were investigated by nondestructive Far Infrared (FIR) Fourier Transform Spectroscopy. A new evaluation method was employed in order to obtain the phonon parameters the layer thicknesses as well as the densities and mobilities of the carriers. This method was successfully applied for layer thicknesses as low as O. lprn and carrier concentrations of about 2 . 1O''6cm3.
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Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)
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Autor/in / Beteiligte Person: | Westwood, David I. ; Morley, Stefan ; Woolf, D. A. ; Richter, W. ; Zahn, Dietrich R. T. ; Eickhoff, T. ; Williams, R.H. |
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Zeitschrift: | SPIE Proceedings, 1991-03-01 |
Veröffentlichung: | SPIE, 1991 |
Medientyp: | unknown |
ISSN: | 0277-786X (print) |
DOI: | 10.1117/12.24397 |
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