Silicon substrate surface modification with nanodiamonds for CVD-synthesis of polycrystalline diamond

The use of polycrystalline diamond films is promising in photonics and electronics, as well as in other fields of science and technology. At present, it is limited by the complexity of obtaining high-quality films of required size, associated with the cracks formation at the film periphery caused by thermal stresses. Also, one of the key points is to increase films growth rate without sacrificing of their continuity and high quality. Substrate surface preparation makes possible to increase the initial rate of film formation and to form a continuous layer of diamond film on its surface. This work presents the results of polycrystalline films synthesis and the selection of optimal deposition regime. These results make possible to obtain high-quality polycrystalline diamond films of a larger area, which will significantly expand scope of their application.