Sub-band-gap surface photovoltage in Si/SiO2structures with quasi-continuously distributed interface traps and a deep. In level in the semiconductor bulk
In: Philosophical Magazine B, Jg. 57 (1988-06-01), S. 703-713
Online
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Zugriff:
Computer simulation studies of sub-band-gap surface photovoltage (SPV) spectra of Si/SiO2 structures with optically active quasi-continuously distributed interface traps (ITS) and an In deep bulk level (DBL) are presented. The calculations have been carried out at T = 93 K for a variety of exciting light intensities. In order to separate the IT and DBL contributions to the SPV spectra, two Si/SiO2 structures have been considered separately. The substrate in the first structure contains only shallow B acceptors and that in the second structure only deep In acceptors. In the (Si: B)/SiO2 case the SPV spectrum has been explained in terms of a proper model for the IT optical behaviour. The theoretical results have been experimentally verified and the IT photoionization cross-sections have been determined. In the (Si: In)/SiO2 case the conditions have been found under which both IT and In DBL influence the SPV spectra behaviour. The possibility of determining basic DBL optical parameters has been shown.
Titel: |
Sub-band-gap surface photovoltage in Si/SiO2structures with quasi-continuously distributed interface traps and a deep. In level in the semiconductor bulk
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Autor/in / Beteiligte Person: | Gergov, B. ; Hardalov, Ch. M. ; Germanova, K. |
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Zeitschrift: | Philosophical Magazine B, Jg. 57 (1988-06-01), S. 703-713 |
Veröffentlichung: | Informa UK Limited, 1988 |
Medientyp: | unknown |
ISSN: | 1463-6417 (print) ; 1364-2812 (print) |
DOI: | 10.1080/13642818808208487 |
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