Numerical analysis of CdS-CIGS interface configuration on the performances of Cu(In,Ga)Se2 solar cells
In: Chinese Journal of Physics, Jg. 67 (2020-10-01), S. 230-237
Online
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Zugriff:
One dimension solar Cell Simulation package (SCAPS) is used to analyze the impact of the CdS-CIGS interface configuration on the performances of CIGS solar cells. We simulated the current-voltage characteristic of two models of the cell: one with a donor type defect (OVC model) and the other with acceptor type defect (P+ model) at the CdS-CIGS interface. The advantages and disadvantages of these CIGS surface configuration on the electrical parameters were discussed according to their thicknesses, defect density and carrier lifetime. The simulation results show that the model with the P+ layer has poor performance when its thickness and defect density increase, due to a huge distortion on the J-V characteristic. On the other hand, the OVC layer plays a fundamental role in the performance of CIGS solar cells. Better performances are obtained with the OVC model when the density of donor defect is in the range 1013 - 1015 cm−3, the charge carriers lifetime in the range 0.02 - 1 ns, and the thickness of the OVC layer in the range 200 - 400 nm.
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Numerical analysis of CdS-CIGS interface configuration on the performances of Cu(In,Ga)Se2 solar cells
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Autor/in / Beteiligte Person: | G.L. Mbopda Tcheum ; Ndjaka, J.M.B. ; Guirdjebaye, N. ; Ouédraogo, S. ; A. Teyou Ngoupo |
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Zeitschrift: | Chinese Journal of Physics, Jg. 67 (2020-10-01), S. 230-237 |
Veröffentlichung: | Elsevier BV, 2020 |
Medientyp: | unknown |
ISSN: | 0577-9073 (print) |
DOI: | 10.1016/j.cjph.2020.02.033 |
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