A Scalable 20V Charge-Pump-Based Driver in 65nm CMOS Technology
In: IEEE Transactions on Circuits and Systems II: Express Briefs, Jg. 69 (2022), S. 55-59
Online
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Zugriff:
This paper presents a 20V square-wave output driver in standard bulk CMOS technology powered from a 2.5V supply. The proposed high-voltage driver is based on a bidirectional charge pump architecture which is by default modular, scalable and maintains all device voltage tolerances. Thanks to deep nwell isolation and a new all-nMOS driver stage design, we could extend the voltage range of our 65nm technology from 12 V to 20 V reliably. The driver uses thick-oxide devices readily available at no extra cost and occupies 0.13 mm2 of area. The driver has a 20V swing when driving a 100lA load, fully switches a 50pF capacitive load at 25 kHz, and has a 48 % peak power efficiency.
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A Scalable 20V Charge-Pump-Based Driver in 65nm CMOS Technology
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| Autor/in / Beteiligte Person: | Ibrahim, Sameh A. ; Chih-Kong Ken Yang ; Toubar, Mostafa ; Ismail, Yousr |
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| Zeitschrift: | IEEE Transactions on Circuits and Systems II: Express Briefs, Jg. 69 (2022), S. 55-59 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2022 |
| Medientyp: | unknown |
| ISSN: | 1558-3791 (print) ; 1549-7747 (print) |
| DOI: | 10.1109/tcsii.2021.3083514 |
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