Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3
In: Applied Physics Letters, Jg. 113 (2018-10-29), S. 182101-182101
Online
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Zugriff:
Thin films of copper iodide (CuI) were grown on (-201) bulk Ga2O3 and (010) epitaxial (Al0.14Ga0.86)2O3 using a copper film iodination reaction method. The valence band offsets for these heterostructures were measured by X-ray photoelectron spectroscopy (XPS). High resolution XPS data of the O 1s peak and onset of elastic losses were used to establish the (Al0.14Ga0.86)2O3 bandgap to be 5.0 ± 0.30 eV. The valence band offsets were −0.25 eV ± 0.07 eV and 0.05 ± 0.02 eV for CuI on Ga2O3 or (Al0.14Ga0.86)2O3, respectively. The respective conduction band offsets were 1.25 ± 0.25 eV for Ga2O3 and 1.85 ± 0.35 eV for (Al0.14Ga0.86)2O3. Thus, there is a transition from type-II to type-I alignment as Al is added to β-Ga2O3. The low valence band offsets are ideal for hole transport across the heterointerfaces.
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Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3
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| Autor/in / Beteiligte Person: | Ren, Fan ; Hays, David C. ; Pearton, Stephen J. ; Tadjer, Marko J. ; Hobart, Karl D. ; Gila, Brent P. ; Fares, Chaker |
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| Zeitschrift: | Applied Physics Letters, Jg. 113 (2018-10-29), S. 182101-182101 |
| Veröffentlichung: | AIP Publishing, 2018 |
| Medientyp: | unknown |
| ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
| DOI: | 10.1063/1.5055941 |
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