Influence of Buffer Materials on the Pyroelectric Properties of (Pb0.9La0.1)TiO3 Thin Films
In: Japanese Journal of Applied Physics, Jg. 37 (1998-12-01), S. 6552-6552
Online
unknown
Zugriff:
The effects of the LaNiO3 (LNO) and SrRuO3 (SRO) buffer layers on the characteristics of the subsequently deposited (Pb0.9La0.1)TiO3 (PLT) thin films were examined. The Pt-layer precoated on Si-substrates results in tetragonal perovskite PLT/LNO/Pt/Si and PLT/SRO/Pt/Si films, which possess ferroelectric properties superior to the cubic films (PLT/LNO/Si3N4/Si). Using SrRuO3 layers in lieu of LaNiO3 layers as buffer materials significantly improves the ferroelectric behavior of PLT thin films. The optimized electrical properties are: K=460, P r=15 µC/cm2, E c=25 kV/cm, J L = 8 ×10-7 A/cm2 (at 50 kV/cm) and p=0.304 µC/cm2·K for the PLT/SRO/Pt/Si thin films deposited at 500°C substrate temperature.
| Titel: |
Influence of Buffer Materials on the Pyroelectric Properties of (Pb0.9La0.1)TiO3 Thin Films
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| Autor/in / Beteiligte Person: | Lin, I-Nan ; Jiang, Jian-Der ; Tseng, Yung-Kuan ; Liu, Kuo-Shung |
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| Zeitschrift: | Japanese Journal of Applied Physics, Jg. 37 (1998-12-01), S. 6552-6552 |
| Veröffentlichung: | IOP Publishing, 1998 |
| Medientyp: | unknown |
| ISSN: | 1347-4065 (print) ; 0021-4922 (print) |
| DOI: | 10.1143/jjap.37.6552 |
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